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Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric

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7 Author(s)
Park, H. ; Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea ; Rahman, M.S. ; Chang, M. ; Lee, B.H.
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Published in:

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

Date of Conference:

April 17-21, 2005