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Effects of high-k post-deposition cleaning in improving CMOS bias instabilities and mobility: a potential issue in reliability of dual metal gate technology

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5 Author(s)
Akbar, M.S. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Moumen, N. ; Barnett, J. ; Byoung-Hun Lee
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First Page of the Article

Published in:

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

Date of Conference:

April 17-21, 2005