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Hot carrier generation and reliability of BT(body-tied)-fin type SRAM cell transistors (Wfin=20~70nm)

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12 Author(s)
Young Joon Ahn ; R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea ; Cho, Hye Jin ; Hee Soo Kang ; Choong-Ho Lee
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First Page of the Article

Published in:

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

Date of Conference:

April 17-21, 2005