By Topic

Damage-Less Sputter Depositions by Plasma Charge Trap for Metal Gate Technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Takeuchi, H. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Min She ; Watanabe, K. ; Tsu-Jae King

Damage-free sputter deposition process has been developed for metal gate complementary metal-oxide-semiconductor technology. A plasma charge trap (PCT) was introduced in order to eliminate high-energy particle bombardment during sputter deposition processes. Molybdenum (Mo)-gated PMOSFETs were fabricated using a conventional gate-first process. It is shown that the PCT technology yields excellent characteristics in current drivability, as well as in gate oxide integrity (GOI) such as gate leakage current and charge-to-breakdown (Q_BD) . The metal gate was also applied to a nonvolatile memory (NVM), which would require most stringent damage control, and good retention characteristics were demonstrated.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:18 ,  Issue: 3 )