Mathematical analysis and simulation for the electrostatic discharge (ESD) according to the EN 61000-4-2

The paper is a study for the better understanding of electrostatic discharge (ESD). Electrostatic discharge can change the electrical characteristics of a semiconductor device, degrading or destroying it. Both a mathematical analysis and a simulation process of the ESD generator circuit of the European Standard 61000-4-2 are presented. In the mathematical aspect of the problem, the differential equations for different types of EUT (equipment under test) are solved. A computer simulation of the two types of EUT circuits is shown, using both PSPICE and Matlab programs. A comparison between theoretical results of the mathematical analysis and the two simulation processes is obtained. Finally, conclusions for the ESD phenomenon are presented.