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Mathematical analysis and simulation for the electrostatic discharge (ESD) according to the EN 61000-4-2

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4 Author(s)
Fotis, G.P. ; Electr. Power Dept., Nat. Tech. Univ. of Athens, Greece ; Gonos, I.F. ; Iracleous, D.P. ; Stathopulos, I.A.

The paper is a study for the better understanding of electrostatic discharge (ESD). Electrostatic discharge can change the electrical characteristics of a semiconductor device, degrading or destroying it. Both a mathematical analysis and a simulation process of the ESD generator circuit of the European Standard 61000-4-2 are presented. In the mathematical aspect of the problem, the differential equations for different types of EUT (equipment under test) are solved. A computer simulation of the two types of EUT circuits is shown, using both PSPICE and Matlab programs. A comparison between theoretical results of the mathematical analysis and the two simulation processes is obtained. Finally, conclusions for the ESD phenomenon are presented.

Published in:

Universities Power Engineering Conference, 2004. UPEC 2004. 39th International  (Volume:1 )

Date of Conference:

8-8 Sept. 2004

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