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Some aspects on modeling and characterization of deep submicrometer CMOS gates driving lossless transmission lines

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3 Author(s)
Burdia, D. ; Fac. of Electron. & Telecommun., Gh. Asachi Tech. Univ., Iasi, Romania ; Bozomitu, R.-G. ; Comsa, C.-R.

The transient behavior of a CMOS gate driving an inductive-capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage and short-circuit power are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The final results are in very good agreement with SPICE simulations.

Published in:

Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on  (Volume:2 )

Date of Conference:

13-16 May 2004

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