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Computer simulation of anisotropic crystal etching

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1 Author(s)
Sequin, C.H. ; California Univ., Berkeley, CA, USA

The geometrical shapes resulting from anisotropic etching of crystalline substances are investigated. A simulator has been built that constructs boundary representations of the polyhedral models of such shapes starting from an etch rate polar diagram. Special attention is given to situations in which new faces emerge that were not previously present.<>

Published in:

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Date of Conference:

24-27 June 1991

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