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Analytical thermal noise model suitable for circuit design using short-channel MOSFETs

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6 Author(s)

The paper proposes a new analytical noise model for short-channel MOSFETs which covers both the linear and the saturation regions. Both the channel thermal noise model and the gate-induced model are presented. The analytical equations for the noise parameters are also derived. Modeling results show an excellent agreement with measured noise parameter data.

Published in:

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Date of Conference:

12-14 June 2005