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A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

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2 Author(s)
Guo, J.C. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tan, T.Y.

A new T-model is developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional π-model. Good match with the measured S-parameters, L(ω), Re(Zin(ω)), and Q(ω) proves the proposed T-model. Besides the broadband feature, scalability is justified by the good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.

Published in:

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Date of Conference:

12-14 June 2005