Referenced Items are not available for this document.
This work demonstrates the feasibility of a low area, low consumption, low noise amplifier (LNA) for 40 GHz wireless communications in SiGe:C BiCMOS Technology. The two stage LNA was achieved using a simple approach due to the micro-strip line characteristics and exhibits a gain of 23 dB and 3.7 dB noise figure at 40 GHz for a total DC power consumption less than 20 mW. Linearity measurements provide an IIP1 of -12 dBm and an IIP3 better than 14 dBm. This allows a dynamic range of 62 dB and a third order free spurious dynamic range around 51 dB.
Published in:
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Date of Conference: 12-14 June 2005
- Page(s):
- 565 - 568
- ISSN :
- 1529-2517
- Print ISBN:
- 0-7803-8983-2
- INSPEC Accession Number:
- 8487815
- Digital Object Identifier :
- 10.1109/RFIC.2005.1489876
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