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This work demonstrates the feasibility of a low area, low consumption, low noise amplifier (LNA) for 40 GHz wireless communications in SiGe:C BiCMOS Technology. The two stage LNA was achieved using a simple approach due to the micro-strip line characteristics and exhibits a gain of 23 dB and 3.7 dB noise figure at 40 GHz for a total DC power consumption less than 20 mW. Linearity measurements provide an IIP1 of -12 dBm and an IIP3 better than 14 dBm. This allows a dynamic range of 62 dB and a third order free spurious dynamic range around 51 dB.
Date of Conference: 12-14 June 2005