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Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology

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7 Author(s)
Moussa, M.S. ; Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium ; Pavageau, C. ; Danneville, F. ; Russat, J.
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The behavior of an integrated traveling wave amplifier (TWA), fabricated in a 130 nm silicon-on-insulator (SOI) CMOS process, has been characterized over a temperature range from 25°C to 250°C. The TWA is a four-stage cascode design which uses floating body (FB) transistors and microstrip lines as passives. A gain of 7 dB with a 0.4-27 GHz bandwidth is measured under 1.4 V supply voltage. The effects of high temperature are observed on the gain of the TWA, as well as on the SOI transistors and the microstrip lines.

Published in:

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Date of Conference:

12-14 June 2005

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