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A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure

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4 Author(s)
Chu, C.S. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Yugang Zhou ; Chen, K.J. ; Kei May Lau

A novel GaN-based double-channel metal-semiconductor-metal configuration planar inter-digitated varactor, fabricated with a HEMT compatible process, is presented. Our varactors achieved high Q-factor, wide tuning range, and high minimum Q-factor (Qmin). The double-channel heterostructure extends the useful high Q-factor capacitance tuning range of the varactors. The operation of the varactor is explained by a physical equivalent circuit, in which the whole changing trend of extracted Q-factors over bias voltage and extracted resistance can be explained. The measurement results of the novel double-channel varactors are compared with varactors fabricated on a single channel heterostructure in order to show their superior performance.

Published in:

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Date of Conference:

12-14 June 2005