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High voltage swing and high data rate multiplexers in SiGe technology

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3 Author(s)
Wurzer, M. ; Corporate Res., Infineon Technol. AG, Munich, Germany ; Knapp, H. ; Meister, T.F.

A 2:1 time-division multiplexer with high differential output voltage swing of 2×2 Vpp operating at a data rate of 40 Gb/s is reported. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. It is fabricated in 0.35 μm/200 GHz-fT production-near SiGe bipolar technology with a VCE0 of 1.8 V. Furthermore a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s has been realized in the same technology. It consumes 0.75 W.

Published in:

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

Date of Conference:

12-14 June 2005

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