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A sub-100 μW 1.9-GHz CMOS oscillator using FBAR resonator

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3 Author(s)
Y. H. Chee ; Dept. of EECS, California Univ., Berkeley, CA, USA ; A. M. Niknejad ; J. Rabaey

The paper presents an ultra-low power CMOS oscillator using film bulk acoustic resonator (FBAR). The 1.9-GHz oscillator consumes 89 μW from a low supply voltage of 430 mV and achieves an excellent phase-noise performance of -98 dBc/Hz, -120 dBc/Hz and -138 dBc/Hz at 10 kHz, 100 kHz and 1 MHz offset, respectively. The oscillator is implemented in a standard 130 nm CMOS process and packaged using chip-on-board techniques. Compared with other state-of-the-art oscillators, this oscillator has the best figure-of-merit (Ham, D. et al., IEEE J. Solid State Circuits, vol.36, no.6, p.896-909, 2001). To the authors' knowledge, this is the first sub-100 μW GHz-range oscillator reported.

Published in:

2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers

Date of Conference:

12-14 June 2005