By Topic

Direct electro-optical actuation in silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Wolffenbuttel, R.F. ; Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands ; van Drieeunhuizen, B.P.

Light emitting diodes have been fabricated in silicon using p/sup +/n/sup ++/ diodes that are operated at avalanche breakdown. The poor electro-optical conversion efficiency remains the limiting factor and precludes application in large integrated displays. The optimum doping profile of the avalanche diode for light emission depends on the application. A maximum concentration is required at the surface for application in a display and the maximum should be designed in the bulk of the silicon when silicon integrated optics or optocouplers are to be fabricated. Interesting display applications are the presentation of prober data during slicing and bonding under a microscope. The main part of the emitted spectrum is in the near-infrared. The performance of the avalanche light emitting diode in a silicon optocoupler has been experimentally verified. The experiments also indicate good prospects for application in silicon integrated optics.<>

Published in:

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Date of Conference:

24-27 June 1991