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An integrated micro multi-ion sensor using platinum-gate field-effect transistors

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4 Author(s)
Tsukada, K. ; Hitachi Ltd., Tokyo, Japan ; Miyahara, K. ; Shibata, Y. ; Miyagi, H.

An integrated micro multi-ion sensor was designed and fabricated for a high-performance ion sensor applicable to clinical analyses. Platinum gate ISFETs (ion-sensitive field effect transistors), which have a platinum block layer for protection from ion migration and dissolution and are compatible with MOSFETs, are used. The sensor chip consists of, two kinds of ion sensors (K/sup +/ and Na/sup +/ ISFETs) and two CMOS unity-gain buffers. The output voltages are equal to the equivalent gate membrane potentials of the integrated ISFETs and show a wide linear dynamic range. The K/sup +/ and Na/sup +/ ISFETs show good chemical responses, including sensitivities, selectivities, and drifts, which are compatible with those of conventional ion-selective electrodes.<>

Published in:

Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on

Date of Conference:

24-27 June 1991