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Controlling the silicon nitride film density for ultrahigh-rate deposition of top quality antireflection coatings

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7 Author(s)
W. M. M. Kessels ; Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands ; P. J. van den Oever ; B. Hoex ; R. C. M. Bosch
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In this contribution we address the importance of a high mass density for silicon nitride films used as an antireflection coating on crystalline silicon solar cells. Two approaches for finding the optimized deposition conditions are presented. The outcome of these optimization studies clearly show that both the bulk and surface passivation benefit from a high mass density and that top quality antireflection coatings can be obtained at deposition rates up to 5 nm/s.

Published in:

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005.

Date of Conference:

3-7 Jan. 2005