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In this paper simulated single and double layer anti-reflective coatings based on the refractive index limits of silicon nitride (SiN) and silicon oxide (SiO2) are presented. The best structure combines SiN and SiO2, resulting in a reflectance of 0.044 based on the AM1.5 photon flux from 300-1150 nm. PC1D solar cell simulations show that an increase in short circuit current density of 6.4% was possible by replacing an optimised single SiN layer with the above mentioned double layer.
Date of Conference: 3-7 Jan. 2005