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In this paper simulated single and double layer anti-reflective coatings based on the refractive index limits of silicon nitride (SiN) and silicon oxide (SiO2) are presented. The best structure combines SiN and SiO2, resulting in a reflectance of 0.044 based on the AM1.5 photon flux from 300-1150 nm. PC1D solar cell simulations show that an increase in short circuit current density of 6.4% was possible by replacing an optimised single SiN layer with the above mentioned double layer.
Published in:
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Date of Conference: 3-7 Jan. 2005
- Page(s):
- 1237 - 1240
- ISSN :
- 0160-8371
- Print ISBN:
- 0-7803-8707-4
- INSPEC Accession Number:
- 8496410
- Digital Object Identifier :
- 10.1109/PVSC.2005.1488363
- Product Type:
- Conference Publications
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