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A novel SOI lateral bipolar transistor with 30GHz fmax and 27V BVCEO for RF power amplifier applications

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11 Author(s)

This paper describes a lateral bipolar transistor build on SOI substrate (ie. SOI-LBJT) for RF power amplifier applications. The lateral design concept significantly reduces parasitic resistances and capacitances, and enables very high operating frequency and good trade-off to breakdown voltages. This concept is validated by fabricated SOI-LBJT, which delivers frequency (ft/fmax = 12/30GHz) and breakdown voltage (BVCEO=27 V) that approaches the Johnson's limit. This is the first reported Si-BJT that reaches Johnson's limit with BVCEO above 10V.

Published in:

Power Semiconductor Devices and ICs, 2005. Proceedings. ISPSD '05. The 17th International Symposium on

Date of Conference:

23-26 May 2005

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