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Direct experimental verification of shot noise in short channel MOS transistors

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2 Author(s)
Andersson, S. ; Dept. of Electr. Eng., Linkoping Univ., Sweden ; Svensson, C.

Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 μm process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 15 )