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Factors limiting the performance of CdZnTe detectors

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4 Author(s)
A. E. Bolotnikov ; Brookhaven Nat. Lab., Upton, NY, USA ; G. C. Camarda ; G. W. Wright ; R. B. James

In the past few years, significant progress has been achieved in the development of room-temperature semiconductor detectors, particularly those based on CdZnTe (CZT) crystals. Several types of electron-transport-only detectors have been developed: pixel, coplanar-grid, cross-strip, drift-strip, orthogonal coplanar strip, and virtual Frisch grid, many of which are now commercially available. Despite all these varieties in the detector designs, they have many common features and problems. This review summarizes the common detector design constraints and related factors limiting performance of CZT detectors: bulk and surface leakage currents, surface effects, properties of Schottky contacts and surface interfacial layers, charge sharing and loss in multielectrode devices, charge transport nonuniformities, and fluctuations in the pulse height for long-drift-length devices. We also describe unique capabilities at Brookhaven National Laboratory, Upton, NY, for CZT device characterization and recent progress utilizing these tools.

Published in:

IEEE Transactions on Nuclear Science  (Volume:52 ,  Issue: 3 )