By Topic

Device design considerations of a novel high voltage amorphous silicon thin film transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Martin, R.A. ; Xerox Palo Alto Research Center, Palo Alto, CA ; Peng Kein Yap ; Hack, Michael ; Hsing Tuan

The performance of a novel high voltage thin film transistor has been characterized in terms of its geometry and operating conditions. Excellent performance, suitable for large-area electronic application, is achieved for optimized designs. An analytical model is found to fit the performance well.

Published in:

Electron Devices Meeting, 1987 International  (Volume:33 )

Date of Conference:

1987