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Device design considerations of a novel high voltage amorphous silicon thin film transistor

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4 Author(s)
Martin, R.A. ; Xerox Palo Alto Research Center, Palo Alto, CA ; Peng Kein Yap ; Hack, Michael ; Hsing Tuan

The performance of a novel high voltage thin film transistor has been characterized in terms of its geometry and operating conditions. Excellent performance, suitable for large-area electronic application, is achieved for optimized designs. An analytical model is found to fit the performance well.

Published in:

Electron Devices Meeting, 1987 International  (Volume:33 )

Date of Conference: