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High-performance low-temperature poly-Si TFTs for LCD

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9 Author(s)
Mimura, A. ; Hitachi Limited, Hitachi, Ibaraki, Japan ; Konishi, N. ; Ono, K. ; Ohwada, J.
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High-performance low-temperature poly-Si TFTs were developed by a 600°C process so that a glass substrate could be utilized. To achieve low threshold voltage (VTH) and high field effect mobility (µFE), effective hydrogenation using a thin poly-Si gate was employed. Furthermore, active layer poly-Si deposition conditions by LPCVD were optimized. Thinning the gate poly-Si was very effective in reducing VTHby hydrogenation. Crystallinity of poly-Si after therma annealing at 600°C depended closely on the poly-Si deposition temperature and was a maximum at 550-560°C. The developed TFTs, with poly-Si deposited at 550°C and a 1000 Å gate, had a VTHof 6.2 V and µFEof 37 cm2/V.s. These TFTs were successfully applied to LCDs with fully integrated drive circuits.

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Electron Devices Meeting, 1987 International  (Volume:33 )

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