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Complementary GaAs MESFET logic gates

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5 Author(s)
S. M. Baier ; Honeywell Physical Sciences Center, Bloomington, MN ; Gi-Young Lee ; H. K. Chung ; B. J. Fure
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Operation of the first complementary GaAs MESFET (CMES) logic gates is reported. Direct-coupled inverters utilizing p- and n-channel ion-implanted MESFET's demonstrate good transfer characteristics with less than 5-µW power dissipation per gate. Propagation delays as small as 54 ps are attained in 13-stage ring oscillators at room temperature with speed-power products as small as 6 fJ.

Published in:

IEEE Electron Device Letters  (Volume:8 ,  Issue: 6 )