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Submicrometer fully self-aligned AlGaAs/GaAs Heterojunction bipolar transistor

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4 Author(s)
N. Hayama ; NEC Corporation, Kawasaki, Japan ; A. Okamoto ; M. Madihian ; K. Honjo

A novel submicrometer fully self-aligned AlGaAs/GaAs heterojunction bipolar transistor (HBT) for reducing parasitic capacitances and resistances is proposed. The fabrication process utilizes SiO2sidewalls for defining base electrode width and separating this electrode from both emitter and collector electrodes. Measured common-emitter current gain β for a fabricated HBT with 0.6 × 10-µm2emitter dimension and 0.7 × 10-µm2× 2 base dimension is 26 at 9 × 104-A/cm2collector current density.

Published in:

IEEE Electron Device Letters  (Volume:8 ,  Issue: 5 )