By Topic

Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Haddad, S. ; Advanced Micro Devices, Sunnyvale, CA ; Mong-Song Liang

A simple and manufacturable technique to improve thin-gate oxide integrity using nitrogen implant through a polycrystalline-silicon (poly-Si) gate MOS structure is described. The Auger depth profile of the film, after 1100°C oxidation cycle, shows nitrogen pile-up at both poly-Si and substrate interfaces, similar to the NH3annealed thermal oxide. Interface-state generation and charge to breakdown under high-field/current stress are significantly improved. Fowler-Nordheim tunneling characteristics and measured capacitance reveal a 3-percent increase in the film thickness. Negative bulk charge trapping is similar to that of thermal oxide film. These properties can be attributed to the formation of the nitrogen-rich layers at both film interfaces, rather than the bulk of the film.

Published in:

Electron Device Letters, IEEE  (Volume:8 ,  Issue: 2 )