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Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model

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1 Author(s)
M. Bagheri ; Bell Communications Research, Inc., Red Bank, NJ

The recently proposed non-quasi-static dc-to-high-frequency weak-to-strong-inversion model for the four-terminal MOSFET is improved in such a way that closer agreement with exact and experimental results can be obtained. It is shown that the modification of a single parameter leads to significant improvement in the model characteristics.

Published in:

IEEE Transactions on Electron Devices  (Volume:34 ,  Issue: 12 )