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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:34 Issue:12 Help

Improving the non-quasi-static weak-to-strong-inversion four-terminal MOSFET model

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1 Author(s)
Bagheri, M. ; Bell Communications Research, Inc., Red Bank, NJ

The recently proposed non-quasi-static dc-to-high-frequency weak-to-strong-inversion model for the four-terminal MOSFET is improved in such a way that closer agreement with exact and experimental results can be obtained. It is shown that the modification of a single parameter leads to significant improvement in the model characteristics.

Published in:
Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 12 )

Date of Publication: Dec 1987

Page(s):
2558 - 2560
ISSN :
0018-9383
Digital Object Identifier :
10.1109/T-ED.1987.23349
Product Type:
Journals & Magazines
Date of Current Version :
09 August 2005
Issue Date :
Dec 1987
Sponsored by :
IEEE Electron Devices Society

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