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The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

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3 Author(s)
Schwerin, A. ; Siemens Corporate Research and Development, Microelectronics, Munich, Federal Republic of Germany ; Hansch, W. ; Weber, W.

We present a comparative study of device degradation for conventional n- and p-channel MOSFET's. The experimentally determined features of degradation are investigated with a 2-D simulation including fast and slow interface states as well as channel mobility degradation due to Coulomb scattering off these charges. Three different models concerning kind and spatial distribution are studied. We present a model that self-consistently describes the observed experimental features in the pentode and subthreshold regimes of the device. Furthermore, the substrate current is included in this analysis.

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Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 12 )