Cart (Loading....) | Create Account
Close category search window
 

Performance of the focused-ion-striped transistor (FIST)—A new MESFET structure produced by focused-ion-beam implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Rensch, D.B. ; Hughes Research Laboratories, Malibu, CA ; Matthews, D.S. ; Utlaut, M.W. ; Courtney, M.D.
more authors

We report the fabrication and performance of the focused-ion-striped transistor (FIST), which is a GaAs MESFET structure having a channel with stripes of high conductance, going from the source to the drain, separated by regions of semi-insulating material. Calculations show that this structure produces a depletion layer that wraps around the conducting channel stripes and this should result in improved transconductance and output resistance. Experimental results are reported for devices having 1-µm gates and the FIST channels produced by focused-ion-beam implants of silicon with a width of 0.2 µm and a spacing that is varied from 0.2 to 0.5 µm. These verify the basic performance characteristics of the FIST including an increase in stripe transconductance, a two-fold increase in output resistance, and larger values of fTfor small values of Idsnear pinchoff.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 11 )

Date of Publication:

Nov 1987

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.