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Band offset effect on transport in AlxGa1-xAs/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition

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4 Author(s)
Taira, K. ; Sony Corporation Research Center, Yokohama, Japan ; Takano, C. ; Kawai, H. ; Arai, M.

AlxGa1-xAs/GaAs heterojunction bipolar transistors were grown with x in the emitter from 0 to 0.57 and the band offset effect on electron transport has been studied using a new technique. The data, though preliminary, indicate that the transport is dominated by electrons near the conduction-band minima when x < 0.45, but not when x = 0.57.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 10 )

Date of Publication:

Oct 1987

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