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Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit

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2 Author(s)
Curow, Matthias ; Technical University of Hamburg-Harburg, Hamburg, Federal Republic of Germany ; Hintz, A.

The behavior of GaAs Gunn devices in harmonic mode oscillator circuits is numerically simulated taking nonstationary electron transport into account, The output power and dynamic impedances of the Gunn device are calculated for different passive circuitries. It is shown that for maximum output power the passive circuitry should behave like a series resonant circuit.

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Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 9 )