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An improved method of MOSFET modeling and parameter extraction

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4 Author(s)
Krutsick, T.J. ; Lehigh University, Bethlehem, PA ; White, M.H. ; Hon-Sum Wong ; Booth, R.V.H.

A method is presented to accurately determine MOSFET modeling parameters from a single linear region (VDS< 2kBT/q)ID- VGSmeasurement based on the operation of a single transistor in the strongly inverted regime. The intrinsic values of the surface scattering parameter θsand the transistor gain β0may be separated from the series resistance Rsand drain bias VDSeffects while including band bending beyond the 2φFpoint. The mobility (excluding surface scattering effects), threshold voltage, bulk doping, and flat-band voltage are also determined.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 8 )

Date of Publication:

Aug 1987

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