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Surface charge effects on planar submicrometer GaAs and InP devices

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6 Author(s)
Bru, C. ; C.N.R.S., Université Paris-Sud, Bâtiment, Orsay Cedex, France ; de Carne, P. ; Dansas, P. ; Pascal, D.
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The influence of surface charge effects on the behavior of planar GaAs and InP devices is demonstrated by measuring and calculating the resistances of devices versus the interelectrode length. Both the depletion layer in GaAs and the accumulation layer in InP are shown to be dependent on the interelectrode distance in submicrometer samples.

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Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 8 )