By Topic

Physical modeling of high-current transients for bipolar transistor circuit simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hanggeun Jeong ; University of Florida, Gainesville, FL ; Fossum, J.G.

Existing bipolar transistor models for circuit simulation are extended to properly account for the possible existence of a high-current-induced space-charge region in the epitaxial collector region. The new physical model thus correctly simulates ohmic and nonohmic quasi-saturation (base push-out), for both steady-state and transient operation. High-current transients are accounted for quasi-statically, using a charge-based formalism. The model is implemented in SPICE, and representative simulations and measurements are presented to demonstrate both model utility and necessity.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 4 )