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The thermal response to an electro static discharge (ESD) pulse in silicon is presented and discussed using the three-dimensional heat equation and a set of boundary conditions that physically simulate the behavior of input protection mechanisms commonly used in integrated circuits. Waveforms that vary exponentially and linearly in time are quantitatively analyzed for a spatially localized hot spot and for an even distribution of heat along a circular periphery. The results confirm recent observations that deviation from the smooth and slow exponential waveform due to parasitic oscillations and coupling is a major cause of ESD related damage.
Date of Publication: Apr 1987