By Topic

The influence of internal stresses in tungsten-gate electrodes on the degradation of MOSFET characteristics caused by hot carriers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Yamamoto, N. ; Hitachi, Ltd., Kokubunji-shi, Tokyo ; Iwata, Seiichi ; Kume, H.

The characteristic degradation of MOSFET's with tungsten-gate electrodes caused by hot carriers is shown to be enhanced by internal stresses in gate electrodes. These stresses introduce strains in silicon substrates under the edges of gate electrodes, which increases the number of surface states at the Si-SiO2interfaces. As a result, these internal stresses enhance the degradation of MOSFET characteristics due to hot carriers. A new technique for reducing the strains induced in the region under the gate electrodes is presented. With this technique (namely, annealing before patterning tungsten films for gate electrodes), the degradation of tungsten-gate MOSFET's can be decreased to a level compatible with that of conventional silicon gate MOSFET's.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 3 )