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A highly reliable interconnection for a BF+2-implanted junction utilizing a TiN/Ti barrier metal system

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4 Author(s)
Maeda, T. ; Toshiba Corporation, Kawasaki, Japan ; Nakayama, T. ; Shima, S. ; Matsunaga, J.

A submicrometer-rule interconnection structure of the Al-Si layer to the BF2+-implanted Si region is described. The contact resistance of Al-Si to BF2+-implanted Si increases more than those to B+- or As+-implanted Si, as contact hole size is scaled down to around 1 µ2. Through SEM and TEM analyses, it is found that solid phase epitaxial growth of Si takes place on the contact interfaces, where crystalline defects induced by BF2+implantation act as seeds. Thus, the effective metal contact area to Si is reduced very much. In order to realize a stable metallization system, a TiN/Ti barrier metal structure is introduced. The TiN/Ti structure is optimized in terms of contact resistance and contact barriers, and its feasibility for submicrometer-rule CMOS VLSI's is clarified.

Published in:

Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 3 )

Date of Publication:

Mar 1987

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