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A novel planarization technique for optoelectronic integrated circuits and its application to a monolithic AlGaAs/GaAs p-i-n FET

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3 Author(s)
S. Miura ; Fujitsu Ltd., Atsugi, Japan ; O. Wada ; K. Nakai

A new planarization technique for use in fabricating optoelectronic integrated circuits (OEIC's) has been developed. The conditions of substrate preparation and ion-beam etching to obtain a perfectly planar, embedded structure have been analyzed in detail. This process has been successfully applied to monolithically integrate an AlGaAs/GaAs p-i-n FET photoreceiver. These results indicate that this planarization technique is useful for fabricating OEIC's including large-scale integrated receivers and transmitters.

Published in:

IEEE Transactions on Electron Devices  (Volume:34 ,  Issue: 2 )