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A novel planarization technique for optoelectronic integrated circuits and its application to a monolithic AlGaAs/GaAs p-i-n FET

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3 Author(s)
Miura, S. ; Fujitsu Ltd., Atsugi, Japan ; Wada, Osamu ; Nakai, K.

A new planarization technique for use in fabricating optoelectronic integrated circuits (OEIC's) has been developed. The conditions of substrate preparation and ion-beam etching to obtain a perfectly planar, embedded structure have been analyzed in detail. This process has been successfully applied to monolithically integrate an AlGaAs/GaAs p-i-n FET photoreceiver. These results indicate that this planarization technique is useful for fabricating OEIC's including large-scale integrated receivers and transmitters.

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Electron Devices, IEEE Transactions on  (Volume:34 ,  Issue: 2 )