Cart (Loading....) | Create Account
Close category search window

Performance of digital GaAs E/D MESFET circuits fabricated in GaAs-on-Si substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Shichijo, H. ; Texas Instruments, Incorporated, Dallas, Texas ; Lee, J.W. ; McLevige, W.V. ; Taddiken, A.

A functional GaAs enhancement/ deplet on (E/D) 1K-bit SRAM and other digital circuits have been fabricated in a GaAs layer grown by MBE on a silicon substrate. These are the most complex digital circuits reported to date for GaAs-on-Si material. The device performance is compared with the bulk GaAs devices fabricated concurrently using identical processes. The average transconductances of enhancement and depletion FETs are found to be approximately 80% of those for bulk GaAs devices. A threshold voltage standard deviation as small as 27 mV across a two inch wafer has been realized. The GaAs-on-Si 1K-bit SRAM has row address access times ranging from 6 to 14 nsec which compares favorably to 4 to 12 nsec for the same SRAMs in bulk GaAs slices.

Published in:

Electron Devices Meeting, 1986 International  (Volume:32 )

Date of Conference:


Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.