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The effects of weak gate-to-drain(source) overlap on MOSFET characteristics

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4 Author(s)
Ko, P.K. ; University of California, Berkeley, CA ; Chan, T.Y. ; Wu, A.T. ; Hu, C.

Recent studies showed that minor structural differences in the gate-to-drain (source) overlap of a MOSFET has unexpectedly strong influence on its characteristics. As the overlap is weakened, the drain drive degrades, the substrate and gate currents show abnormal behaviors, and the device lifetime suffers. A simple physical model is presented that adequately explains most of these observed high-field effects, including the asymmetry in device properties. Implications of the wear-overlap phenomena on future process and device designs are discussed.

Published in:

Electron Devices Meeting, 1986 International  (Volume:32 )

Date of Conference:

1986