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1800v and 1700v non-latch-up Bipolar-Mode MOSFETs have been developed, based on Silicon Wafer Direct Bonding (SDB) technique: a new substrate wafer fabrication process superior to conventional epitaxy. The SDB technique easily realizes an optimum N buffer structure as well as a high resistivity N-layer. Self-aligned deep P+diffusions, densified hole bypasses and an amorphous silicon resistive field plate have been implemented. 0.45µsec fall-time and more than 100A maximum current capability have been successfully realized.