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Majority and minority carrier transport in polysilicon emitter contacts

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5 Author(s)
Crabbe, E. ; Stanford University, Stanford, California ; Swirhun, S. ; del Alamo, J. ; Pease, R.F.W.
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The minority hole transport in polysilicon emitter contacts has been studied with a novel pnp test transistor. Segregated arsenic at the polysilicon/silicon interface is mostly responsible for the base current reduction in polysilicon-contacted npn transistors. This improvement comes at a price of a higher emitter resistance. This resistance was measured with a Kelvin resistor structure and the base current/ emitter resistance trade-off is quantified.

Published in:

Electron Devices Meeting, 1986 International  (Volume:32 )

Date of Conference:

1986

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