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A novel contact process for power MOSFET's

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4 Author(s)
Chen, G. ; IXYS, San Jose, CA ; Sapp, S. ; Wylie, N. ; Chenming Hu

A novel technique of making electrical contact to the p diffusions of a DMOS power transistor by over-sintering the aluminum/ silicon contact is reported. The potential advantages are the elimination of a critical masking step and smaller cell size. Test devices showed somewhat higher contact resistances to the n and p diffusions than achievable by the conventional process. Good I-V characteristics and yield were obtained over a wide range of contact process conditions.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 12 )

Date of Publication:

Dec 1986

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