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Effects of a buried p-layer on alpha-particle immunity of MESFET's fabricated on semi-insulating GaAs substrates

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3 Author(s)
Umemoto, Y. ; Hitachi, Ltd., Tokyo, Japan ; Masuda, N. ; Mitsusada, K.

Measurements of alpha-particle-induced charge are carried out for the first time on both conventional MESFET's fabricated directly on semi-insulating GaAs substrates and MESFET's with a buried p-layer. The maximum collected charge is found to be 65 fC in the MESFET's with a buried p-layer, one order smaller than in conventional MESFET's.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 6 )

Date of Publication:

Jun 1986

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