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A new channel-doping technique for high-voltage depletion-mode power MOSFET's

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5 Author(s)
Ueda, D. ; Matsushita Electronics Corporation, Osaka, Japan ; Shimano, A. ; Kitamura, I. ; Takagi, H.
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A new channel-doping technique for high-voltage depletion-mode double-diffused MOSFET (DMOSFET) is demonstrated. The technique that is used is channel doping performed at the surface of the laterally diffused body region in a self-aligned manner. Decrease of the breakdown voltage due to decrease of the threshold voltage is successfully prevented by using the new technique. A 1050-V DMOSFET was experimentally fabricated with a negative threshold voltage of -2 V.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 5 )

Date of Publication:

May 1986

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