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Monolithically integrated n0.53Ga0.47As/InP direct-coupled junction field-effect transistor amplifier

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5 Author(s)
Cheng, Julian ; AT&T Bell Laboratories, Murray Hill, NJ ; Guth, G. ; Washington, M. ; Forrest, S.R.
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Monolithic integrated In0.53Ga0.47As/InP dc-coupled amplifiers have been built using self-aligned gate junction field-effect transistors (JFET's) grown by molecular beam epitaxy (MBE). The amplifier consists of a common-source inverter stage and a source-follower buffer with diode level shifters. Using a 1-µm gate length, amplifiers with a gain of 12 dB have been fabricated.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 4 )

Date of Publication:

Apr 1986

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