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Novel high-density infrared Schottky charge-coupled detector array

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3 Author(s)
Kurianski, J.M. ; University of New South Wales, Kensington, Australia ; Green, Martin A. ; Storey, John W.V.

Silicon-infrared (IR) detector arrays normally consist of Schottky barrier detector elements connected via transfer gates to conventional charge-coupled device (CCD) shift registers. A novel device structure is described which incorporates both the detection and shift register functions into a single Schottky element. Advantages include the greatly increased detector fill factor and the possibility of constructing much larger detector arrays on a chip of given size.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 2 )