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High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis

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1 Author(s)
Hutchby, J.A. ; Research Triangle Institute, Research Triangle Park, NC

The AlGaAs/GaAs P-n-p heterojunction bipolar transistor (HBT) is shown by a simple analysis to exhibit millimeter wave and digital switching performance comparable to similar N-p-n structures. For example, a P-n-p HBT with a 1-µm emitter stripe and 34-µm2total area yieldsf_{tau} = 31GHz,f_{max} = 94GHz, and an intrinsic switching speedtau_{s} = 8ps. A similar N-p-n structure exhibitsf_{tau} = 56GHz,f_{max} = 102GHz, andtau_{s} = 8ps.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 2 )