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Enhanced carrier lifetime and diffusion length in GaAs by strained-layer MOCVD

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4 Author(s)
Beneking, H. ; Aachen Technical University, Aachen, Federal Republic of Germany ; Narozny, P. ; Roentgen, P. ; Yoshida, M.

It is shown that by MOCVD growth of a single strained GaAs:In layer, the quality of epitaxial GaAs material can be remarkably enhanced. This is demonstrated with respect to lifetimes and diffusion lengths of minority carriers. This technique permits an improvement of the quality of electronic and optoelectronic bipolar devices.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 2 )