By Topic

A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Brennan, Kevin ; Georgia Institute of Technology, Atlanta, GA ; Hess, K.

A new explanation of carrier heating within silicon inversion layers is offered which is in full accordance with classical laws. We show that, as is usually assumed, the heating is due to the longitudinal electric field. However, also the transverse field influences the electron temperature by determining the minimum kinetic energy and therefore influencing the electron mobility. In this way the distribution function is heated above that in bulk material as witnessed by the significant increase in measured noise figures and in the calculated electron impact ionization rate.

Published in:

Electron Device Letters, IEEE  (Volume:7 ,  Issue: 2 )